M Morvic : rechercher sur Z-Library

Crystal Research and Technology

Année:

2000

Langue:

english

Fichier:

PDF, 95 KB

english, 2000

Electrical characteristics of GaAs LPE schottky diodes

R. V. Konakova, Yu. A. Tkhorik, I. L. Zaitsevskii, V. Benč, M. Morvic, P. Kordoš, J. Červenák

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 655 KB

english, 1983

On the frequency response of Ge-magnetodiodes

J. Betko, M. Morvic

Journal:

Année:

1971

Langue:

english

Fichier:

PDF, 165 KB

english, 1971

High gain (P) AlGaAs(N) GaAs heterojunction avalanche photodiodes

J. Novák, M. Morvic, P. Kordoš

Journal:

Materials Science and Engineering: B

Année:

1982

Langue:

english

Fichier:

PDF, 219 KB

english, 1982

Wet chemical separation of low-temperature GaAs layers from their GaAs substrates

J. Novák, M. Morvic, J. Betko, A. Förster, P. Kordoš

Journal:

Année:

1996

Langue:

english

Fichier:

PDF, 659 KB

english, 1996

Characterization of low-temperature GaAs by galvanomagnetic an photoluminescence measurements

J. Novák, M. Kučera, M. Morvic, J. Betko, A. Förster, P. Kordoš

Journal:

Materials Science and Engineering: B

Année:

1997

Langue:

english

Fichier:

PDF, 410 KB

english, 1997

Properties of silicon pulse doped InGaP layers grown by LP-MOCVD

L. Malacký, R. Kúdela, M. Morvic, J. Novák, H.-H. Wehmann

Journal:

Materials Science and Engineering: B

Année:

1997

Langue:

english

Fichier:

PDF, 473 KB

english, 1997

Some electrical properties of the magnetic barrier layer effect in Ge

M. Morvic, K. Měřínský

Journal:

Année:

1971

Langue:

english

Fichier:

PDF, 171 KB

english, 1971

Avalanche breakdown peculiarities of AlxGa1-xAs IMPATT diodes

R. V. Konakova, Yu. A. Tkhorik, I. L. Zaitsevskii, P. Kordoš, M. Morvic, J. Červenák

Journal:

Année:

1981

Langue:

english

Fichier:

PDF, 160 KB

english, 1981

The Influence of Stress on the Fine Structure of Schottky Diode I-U Characteristics in the Breakdown Region

R. V. Konakova, Yu. A. Tkhorik, I. L. Zaitsevskii, P. Kordos, M. Morvič, J. Cervenak

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 202 KB

english, 1983

Immiscibility in In1−xGax P1−y Asy Lattice Matched to GaAs

R. Kúdela, M. Morvic

Journal:

Année:

1986

Langue:

english

Fichier:

PDF, 134 KB

english, 1986

Some properties of MIS structures prepared by plasma oxidation of Al layers on GaAs

E. Pinčíak, B. Maťátko, J. Bartoš, I. Thurzo, M. Geendel, V. Nádaždy, M. Zubeková, M. Morvic

Journal:

physica status solidi (c)

Année:

1988

Langue:

english

Fichier:

PDF, 542 KB

english, 1988

Resistivity and mobility in ordered InGaP grown by MOVPE

S. Hasenöhrl, J. Betko, M. Morvic, J. Novák, J. Fedor

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 185 KB

english, 2004

Fabrication of a-SiGe structure by rf sputtering for solar cell purposes

M. Serenyi, J. Betko, Á. Nemcsics, N. Q. Khanh, M. Morvic

Journal:

physica status solidi (c)

Année:

2003

Langue:

english

Fichier:

PDF, 156 KB

english, 2003

Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare-earth oxides

J. Novák, M. Kuliffayová, M. Morvic, P. Kordoš

Journal:

Journal of Crystal Growth

Année:

1989

Langue:

english

Fichier:

PDF, 318 KB

english, 1989

Über die elektrischen eigenschaften von Ge-magnetodioden

K. Měřínský, J. Betko, M. Morvic, P. Kordoš

Journal:

Année:

1968

Fichier:

PDF, 300 KB

1968

Current-voltage characteristics of GaAs p-i-n and n-i-n diodes

L. Hrivnák, M. Morvic, J. Betko

Journal:

Journal of Crystal Growth

Année:

1977

Langue:

english

Fichier:

PDF, 284 KB

english, 1977

Anisotropy in transport properties of ordered strained InGaP

S. Hasenöhrl, J. Novák, R. Kúdela, J. Betko, M. Morvic, J. Fedor

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 136 KB

english, 2003

Electrical properties of semi-insulating GaAs irradiated with neutrons

M Morvic, P Boháček, J Betko, F Dubecký, J Huran, M Sekáčová

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2002

Langue:

english

Fichier:

PDF, 146 KB

english, 2002

Phase diagram and LPE growth of quaternary InGaAsP on GaAs

R. Kúdela, M. Morvic

Journal:

Journal of Crystal Growth

Année:

1987

Langue:

english

Fichier:

PDF, 1.31 MB

english, 1987

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - On the measurement of high resistance semiconductors by the van der Pauw method

Morvic, M.

Année:

2000

Langue:

english

Fichier:

PDF, 255 KB

english, 2000

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor

Hasenohrl, S., Kucera, M., Morvic, M., Novak, J.

Année:

2008

Langue:

english

Fichier:

PDF, 5.29 MB

english, 2008

[IEEE 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications - Glasgow, UK (13-14 Nov. 2000)] 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) - Material and device issues of GaN-based HEMTs

Kordos, P., Alam, A., Betko, J., Chow, P.P., Heuken, M., Javorka, P., Kocan, M., Marso, M., Morvic, M., van Hove, J.M.

Année:

2000

Langue:

english

Fichier:

PDF, 497 KB

english, 2000

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Planar hall effect and inagnetoresistance in hall sensors

Morvic, M., Betko, J.

Année:

2004

Langue:

english

Fichier:

PDF, 804 KB

english, 2004

[IEEE Semiconducting and Semi-Insulating Materials Conference - Toulouse, France (29 April-3 May 1996)] Proceedings of Semiconducting and Semi-Insulating Materials Conference - Conductance properties of as-grown and annealed MBE GaAs layers grown at temperatures between 200 and 420°C

Kordos, P., Betko, J., Morvic, M., Novak, J., Forster, A.

Année:

1996

Langue:

english

Fichier:

PDF, 253 KB

english, 1996

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Electrical properties of 2DEG in GaAs/InGaP based structures

Kudela, R., Morvic, M., Kucera, M., Kicin, S., Novak, J.

Année:

2000

Langue:

english

Fichier:

PDF, 231 KB

english, 2000

Conductivity and Hall effect of free-standing highly resistive epitaxial GaN:Fe substrates

Kordoš, P., Morvic, M., Betko, J., Novák, J., Flynn, J., Brandes, G. R.

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 303 KB

english, 2004

Conductivity and Hall-effect in highly resistive GaN layers

Kordoš, P., Javorka, P., Morvic, M., Betko, J., Van Hove, J. M., Wowchak, A. M., Chow, P. P.

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 295 KB

english, 2000

Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs

Betko, J., Morvic, M., Novák, J., Förster, A., Kordos̆, P.

Journal:

Année:

1996

Langue:

english

Fichier:

PDF, 326 KB

english, 1996

Conductivity and Hall effect characterization of highly resistive molecular-beam epitaxial GaN layers

P. Kordoš, M. Morvic, J. Betko, J. M. Van Hove, A. M. Wowchak, P. P. Chow

Année:

2000

Langue:

english

Fichier:

PDF, 452 KB

english, 2000

Delta-doped InGaP grown by low pressure metalorganic chemical vapor deposition

Malacký, L., Kúdela, R., Morvic, M., Černianský, M., Peiner, E., Wehmann, H.-H.

Journal: